Gas sensing performance of Sn-doped WO3 nano materials derived by phosphotungstic acid
- 分享到:
摘要：
采用简便的液相离子交换法制备了Sn掺杂磷钨酸,并通过煅烧衍生出Sn掺杂的氧化钨气敏材料.将材料制成MEMS(微机电系统)气体传感器测量了合成材料的气敏性能.测试结果表明,所得材料对硫化氢气体具有良好的选择性,检测限低至1×10-6(体积分数),且在一定的体积浓度范围内具有良好的线性响应.XRD测试证明了Sn元素的成功掺杂,紫外可见漫反射光谱测定了Sn掺杂后带隙的变化,将其应用于讨论Sn掺杂的气敏增强机理.
Sn-doped phosphotungstic acid was prepared by a simple liquid phase ion exchange method,and Sn-doped tungsten metal oxide semiconductor gas sensing materials were derived by calcination.The MEMS gas sensors were made by as-prepared materials for measurement.The results show that the obtained materials have good selectivity for hydrogen sulfide gas,the detection limit is as low as 1×10-6(volume fraction),and has good linear response in a certain concentration range.The successful doping of Sn element was proved by XRD experiment.The change of band gap after Sn doping was measured by UV-Vis diffuse reflection spectrum,and the gas sensing mechanism of the synthetic material was further discussed.
作者：
徐甲强 吴越
Xu Jiaqiang;Wu Yue(Department of Chemistry,College of Sciences,Novel Energy and Sensing Technology Lab,Shanghai University,Shanghai 200444,China)
机构地区：
上海大学理学院化学系
出处：
《betway官方app 学报：自然科学版》 CAS 北大核心 2023年第1期20-28,F0002,共10页
Journal of Henan Normal University(Natural Science Edition)
基金：
国家重点研发计划项目(2020YFB2008600).
关键词：
Sn掺杂氧化钨 硫化氢 气体传感器 MEMS传感器 气敏机理
Sn-doped WO3 hydrogen sulfide gas sensors MEMS sensor gas sensing mechanism
分类号：
TB212.2 [一般工业技术—工程设计测绘]
