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戴宪起

戴宪起 博士

发布时间:2012-11-26浏览次数:3859

戴宪起 博士
1964年10月生,教授,博士生导师。香港大学博士, 河南省科技创新人才,河南省高校优秀中青年骨干教师,美国物理学会会员,中国物理学学会会员。
曾先后多次赴香港大学、香港城市大学、香港科技大学进行合作研究,多次到美国、香港参加国际会议。长期从事凝聚态物理及表面物理的实验和理论方面的研究工作。近年来,对石墨烯、拓扑绝缘体等狄拉克新材料领域的一些前沿又具应用前景的课题进行了深入的理论研究,已取得了一系列很有价值的科研成果。到目前为止,已在 Appl. Phys. Lett.、Phys. Rev. B、J. Phys Conden. Matt.、Eur. Phys. J. B、Physica E 、Surf. Sci.等国内外重要学术刊物上发表论文一百余篇,其中被SCI收录六十多篇。曾主持承担多项国家国家攀登计划项目、国家自然科学基金、省科技攻关和自然科学基金等项目20余项。

研究领域:低维与纳米材料、狄拉克材料、宽禁带半导体

研究组:凝聚态物理,计算材料理论中心

发表的主要论文:

1.Robust surface state of intrinsic topological insulator Bi2Te2Se thin films: a first-principles study, Xian-Qi Dai, Bao Zhao, Jian-Hua Zhao, Yan-Hui Li, Ya-Nan Tang and Ning Li, J. Phys.: Condens. Matter 24, (2012) 035502 (6pp)
2.Jianhua Zhao, Xianqi Dai, Yawei Dai, Bao Zhao, and Maohai Xie, Lateral in-plane coupling between graphene nanoribbons: A density functional study, J. Appl. Phys. 111, (2012) 043714;(6pp)
3.J.H. Zhao, X.Q. Dai, B. Zhao, Y.W. Dai and X. Zhao, The role of size in spin properties of zigzag graphene nanoribbon, Eur. Phys. J. B85, (2012) 220(6pp)
4.Yanan Tang, Zongxian Yang and Xianqi Dai, A theoretical simulation on the catalytic oxidation of CO on Pt/grapheme, Phys. Chem. Chem. Phys. 2012, Advance Article, DOI: 10.1039/C2CP41441D (7pp)
5.Ya-Nan Tang, Ya-Wei Dai , Bao Zhao Xian-Qi Dai and Zong-Xian Yang, Metal adatoms induced stability, electronic and magnetic behaviors on grapheme, INTEGRATED FERROELECTRICS 129,(2011) 102-110
6.Xian Qi Dai , Jian Hua Zhao , Mao Hai Xie , Ya Nan Tang , Yan Hui Li and Bao Zhao,First-principle study of magnetism induced by vacancies in graphene,Eur. Phys. J. B 80, (2011) 343–349 (SCI)
7.DAI Xian-Qi, TANG Ya-Nan, DAI Ya-Wei, LI Yan-Hui, ZHAO Jian-Hua , ZHAO Bao and YANG Zong-Xian, The structure of Pt clusters on graphene doped with Nitrogen, Boron, and Silicon: A theoretical study, Chinese Physics B 20(5),(2011)056801(1-7) (SCI)
8.Xian-Qi Dai, Yan-Hui Li, Jian-Hua Zhao, Bao Zhao, First-principles study of Ge adsorbed on Perfect and defect grapheme, Physica E , 2011, 43, 1461-1464 (SCI)
9.Yanan Tang, Zongxian Yang, Xianqi Dai, Noble metals induced magnetic properties of grapheme, Journal of Magnetism and Magnetic Materials 323 (2011) 2441–2447
10.Yanan Tang, Zongxian Yang, and Xianqi Dai, Trapping of metal atoms in the defects on grapheme, J. Chem. Phys. 135, (2011) 224704(p7)
11.Zongxian Yang, Xiaohu Yu, Zhansheng Lu, and Xianqi Dai, The direct oxidation of CO on the highly active Pt-skin Pt3Ni(111) surface: A first principles study, Advanced Materials Research 213 (2011) 147-151 (SCI)
12.Jianli Wang, Xiaoshan Wu, Xianqi Dai, and Dongmei Bai, First-principles study of Sr adsorption on InN(0001), Eur. Physics. J. B73, (2010)75-78
13.Jianli Wang, X. S. Wu, J. M. Dong, Dongmei Bai, and Xianqi Dai, The absorption of Be on the surface of (0001)InN, Appl. Surf. Sci.255, (2008) 2533-2537
14.Jianli Wang , Xiaoshan Wu , XianqiDai , Dongmei Bai, Atomic structure for Mg on InN(0001) surface, Physics Letters A 373 (2009) 1796–1799
15.Xian-Qi Dai, Hui-Juan Yan ,Jian-Li Wang, Ya-Ming Liu, Zongxian Yang , and M. H. Xie, The Effect of Cu on O Adsorption on ZnO(0001) Surface: A first-principles Study, J. Phys.: Condens. Matter 20, (2008) 095002(1-4)
16.Xian-Qi Dai, Jian-li Wang, Hui-juan Yan, Xin-hua Wu, M.H. Xie, Structural properties of oxygen on InN(0001) surface
Surface Science 601, ( 2007) 2161-2165
17.Xian-Qi Dai, Feng-Zhen Huang, and Jun-Jie Shi, Localized excitons in self-formed GaN/AlxGa1-xN quantum dots, Moden Phys. Lett. B19, 589(2005)
18.Xian-Qi Dai, Wei-Wei Ju, M. H. Xie, and S.Y. Tong, Ab initio study of indium quantum wire formation on flat and stepped Si(100) surfaces, Surface Review and Letters 12(4),483-487 (2005)
19.Y. G. Cao, S. H. Xu, W. Lu, X. Q. Dai, Y. F. Chan, N. Wang, Y. Liu, H. S. Wu, M. H. Xie, and S. Y. Tong, In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy, Phys. Rev. B71, 155322(2005)
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20. Y. Huang, X.D. Chen, S. Fung, C.D. Beling, C. C. Ling, X. Q. Dai, and M. H. Xie, Current transport property of N-GaN/n-6H-SiC heterojuction: Influence of interface states, Appl. Phys. Lett. 86, 122102(2005)

联系电话:13503805825

电子邮件:xqdai@htu.edu.cn

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